一种具有通孔的半导体结构及其制造方法

Semiconductor structure with through holes and manufacturing method thereof

Abstract

The invention discloses a semiconductor structure with through holes and a manufacturing method thereof. The semiconductor structure comprises a substrate, a plurality of annular through holes and a plurality of solid through holes; the annular through holes and the solid through holes are embedded in the substrate; the solid through holes are through holes filled by metal; and the annular through holes are through holes filled by solid dielectric plugs and metal rings surrounding the solid dielectric plugs. The manufacturing method comprises the steps of: (1) etching a plurality of deep holes on a first surface of the substrate; (2) forming a metal layer; (3) attaching a dry film on the first surface of the substrate and patterning the dry film such that the dry film generates openings on one part of deep holes; (4) filling metal in the deep holes with the openings on the dry film, and removing the dry film; (5) filling dielectric in the remaining deep holes to form the solid dielectric plugs; and (6) thinning a second surface of the substrate. The solid through holes of the semiconductor structure disclosed by the invention can be used for the heat radiation of laminated chips to improve the completeness of a power supply; and the annular through holes can be used for solving the problems, such as stress, warping deformation and the like of the through hole structures.
本发明公开了一种具有通孔的半导体结构及其制造方法,半导体结构包括衬底、多个环形通孔和多个实心通孔,环形通孔和实心通孔嵌于衬底中;实心通孔是金属填充的通孔;环形通孔是实心介质塞和环绕实心介质塞的金属环填充的通孔。其制造方法为:1)在衬底的第一表面上刻蚀出多个深孔;2)形成金属层;3)在衬底第一表面上粘附干膜,图形化所述干膜,使干膜在一部分深孔上形成开口;4)向干膜上有开口的的深孔填充金属,去掉所述干膜;5)向剩余深孔中填充介质,形成实心介质塞;6)减薄所述衬底的第二表面。本发明的半导体结构的实心通孔可以用于叠层芯片散热,改善电源完整性;环形通孔则可以改善通孔结构的应力,以及翘曲变形等问题。

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