具有绝缘层下埋入背控制栅极的SeOI衬底上的数据通路单元

Data path cell on an SeOI substrate with a buried back control gate beneath the insulating layer

Abstract

本发明涉及一种具有绝缘层下埋入背控制栅极的SeOI衬底上的数据通路单元。根据第一方面,本发明涉及一种数据通路单元,其特别适用于其在绝缘体上半导体衬底上制造的集成电路中使用的环境,该衬底包括通过绝缘层与体衬底分隔开的半导体材料薄层,该单元包括场效应晶体管阵列,每个晶体管具有位于该薄层中的源极区(S7)、漏极区(D7)、和由该源极区和漏极区界定的沟道区(C7),且进一步包括形成于该沟道区上方的前栅极控制区(GA7),其特征在于至少一个晶体管(T7)具有形成于该沟道区下的体衬底中的背栅极控制区(GN2),该背栅极区能够被偏压从而改变该晶体管的性能特征。
The invention relates to a data path cell on an SeOI substrate with a buried back control gate beneath the insulating layer. According to the first aspect, the invention provides a data-path cell specifically adapted to its environment for use in an integrated circuit produced on a semiconductor-on-insulator (SeOI) substrate. The data-path cell includes an array of field-effect transistors, each transistor having a source region, a drain region and a channel region formed in the thin semiconductor layer of the SeOI substrate, and further having a front gate control region formed above the channel region. In particular, one or more transistors of the data-path cell further includes a back gate control region formed in the bulk substrate beneath the channel region and configured so as to modify the performance characteristics of the transistor in dependence on its state of bias.

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